Infrared transmission topography for whole-wafer gallium arsenide materials characterization
Solid-State Electronics, ISSN: 0038-1101, Vol: 35, Issue: 3, Page: 319-323
1992
- 8Citations
- 4Usage
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Metrics Details
- Citations8
- Citation Indexes8
- CrossRef8
- Usage4
- Abstract Views4
Article Description
Infrared transmission topography is shown to be useful for evaluating GaAs wafers. Whole-wafer, half-millimeter resolution plots of EL2 density and dislocation density are shown to correlate with plots of saturation current in MESFET devices at an early stage of fabrication.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/0038110192902355; http://dx.doi.org/10.1016/0038-1101(92)90235-5; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0026835465&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/0038110192902355; https://api.elsevier.com/content/article/PII:0038110192902355?httpAccept=text/xml; https://api.elsevier.com/content/article/PII:0038110192902355?httpAccept=text/plain; https://corescholar.libraries.wright.edu/physics/367; https://corescholar.libraries.wright.edu/cgi/viewcontent.cgi?article=1412&context=physics; http://dx.doi.org/10.1016/0038-1101%2892%2990235-5; https://dx.doi.org/10.1016/0038-1101%2892%2990235-5
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