Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition
Applied Physics Letters, ISSN: 0003-6951, Vol: 82, Issue: 10, Page: 1562-1564
2003
- 89Citations
- 414Usage
- 49Captures
Metric Options: CountsSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Citations89
- Citation Indexes88
- 88
- CrossRef83
- Patent Family Citations1
- Patent Families1
- Usage414
- Downloads385
- Abstract Views29
- Captures49
- Readers49
- 49
Article Description
The deep centers in unintentionally doped n-gallium nitride samples grown by metalorganic chemical-vapour deposition were subjected to plasma reactive ion etching. The deep-level transient spectroscopy (DLTS) was used to demonstrate that a well-known trap is enhanced in n-gallium nitride by plasma etching. The carrier concentrations in the control and plasma-etched samples were determined by the capacitance-voltage measurements.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0037429818&origin=inward; http://dx.doi.org/10.1063/1.1560562; https://pubs.aip.org/apl/article/82/10/1562/514066/Plasma-etching-enhanced-deep-centers-in-n-GaN; https://corescholar.libraries.wright.edu/physics/82; https://corescholar.libraries.wright.edu/cgi/viewcontent.cgi?article=1081&context=physics
AIP Publishing
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