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Band gap engineering of ZnO thin films by In 2 O 3 incorporation

Journal of Crystal Growth, ISSN: 0022-0248, Vol: 310, Issue: 12, Page: 3019-3023
2008
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Article Description

Highly transparent and conducting thin films of ZnO–In 2 O 3 were deposited using pulsed laser deposition (PLD) technique. The effect of composition and growth temperature on structural, electrical, and optical properties was studied. The lowest resistivity of 2.11×10 −4 Ω cm and high transparency (∼80%) was obtained for the film having 5% In 2 O 3 in ZnO. The band gap of the films depends on doping level and varies from 3.37 to 3.95 eV.

Bibliographic Details

Ram K. Gupta; Kartik C. Ghosh; Rishi J. Patel; S. K. Mishra; Pawan K. Kahol

Elsevier BV

Physics and Astronomy; Chemistry; Materials Science

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