Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers
Journal of Applied Physics, ISSN: 0021-8979, Vol: 113, Issue: 20
2013
- 5Citations
- 512Usage
- 20Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Metrics Details
- Citations5
- Citation Indexes5
- CrossRef5
- Usage512
- Downloads432
- Abstract Views80
- Captures20
- Readers20
- 20
Article Description
Using 800 nm, 25-fs pulses from a mode locked Ti:AlO laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer InGaAs/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer. © 2013 AIP Publishing LLC.
Bibliographic Details
https://digitalcommons.usu.edu/physics_facpub/2021; https://digitalcommons.usu.edu/physics_facpub/1497; https://digitalcommons.usu.edu/physics_facpub/1440
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84879099479&origin=inward; http://dx.doi.org/10.1063/1.4808337; https://pubs.aip.org/jap/article/113/20/203710/991526/Carrier-capture-dynamics-of-single-InGaAs-GaAs; https://digitalcommons.usu.edu/physics_facpub/2021; https://digitalcommons.usu.edu/cgi/viewcontent.cgi?article=3164&context=physics_facpub; https://digitalcommons.usu.edu/physics_facpub/1497; https://digitalcommons.usu.edu/cgi/viewcontent.cgi?article=2496&context=physics_facpub; https://digitalcommons.usu.edu/physics_facpub/1440; https://digitalcommons.usu.edu/cgi/viewcontent.cgi?article=2439&context=physics_facpub
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