Direct Determination of Interface Trapped Charges
1991
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
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Article Description
A technique to determine the interface trapped charge, Qit, from C-V and I-V measurements is introduced. This Qit technique is free from the assumptions used in the conventional methods for determining the density of interface traps, Dit. The technique is applied to current-stressed metal-oxide-semiconductor (MOS) capacitors with different oxide thicknesses and found to be useful in revealing donor- and acceptor-type characteristics of interface traps.
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