Process-variation-aware electromagnetic-semiconductor coupled simulation
Proceedings - IEEE International Symposium on Circuits and Systems, ISSN: 0271-4310, Page: 2853-2856
2011
- 1Citations
- 10Usage
- 4Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Citations1
- Citation Indexes1
- CrossRef1
- Usage10
- Downloads10
- Captures4
- Readers4
Conference Paper Description
We develop a new method based on the high-frequency electromagnetic (EM)-semiconductor coupled simulation to analyze the impact of multi-type process variations happen around semi-conductormetal structure. It is competent to simultaneously handle geometrical variations like surface roughness and material variations like semi-conductor doping profile, which are difficult for traditional stand alone simulation methods. A sparse grid based stochastic spectral collocation method (SSCM) combined with principle factor analysis (PFA) is implemented to accelerate the stochastic simulation. Numerical results confirm the validity and significance of our variational coupled simulation framework. © 2011 IEEE.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=79960866257&origin=inward; http://dx.doi.org/10.1109/iscas.2011.5938200; http://ieeexplore.ieee.org/document/5938200/; http://xplorestaging.ieee.org/ielx5/5910713/5937406/05938200.pdf?arnumber=5938200; https://scholarsmine.mst.edu/ele_comeng_facwork/5393; https://scholarsmine.mst.edu/cgi/viewcontent.cgi?article=6422&context=ele_comeng_facwork
Institute of Electrical and Electronics Engineers (IEEE)
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