Fine structure in the optical-absorption edge of silicon

Citation data:

Physical Review B, ISSN: 0163-1829, Vol: 7, Issue: 2, Page: 733-739

Publication Year:
1973
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article description
Details of the structure in the indirect optical-absorption edge of silicon were studied by measuring the dependence of the photocurrent in p-n junctions on the energy of the incident photons. The measurements were made at room and higher temperatures for photon energies 0.75