Computer Simulation Of Quantum Transport In High Electron Mobility Transistor, Part 1: The Boltzmann-Poisson-Schrödinger Solver

Citation data:

SIMULATION: Transactions of The Society for Modeling and Simulation International, Vol: 12, Page: 49-65

Publication Year:
1995
Usage 10
Abstract Views 10
Repository URL:
https://digitalscholarship.unlv.edu/ece_fac_articles/418
Author(s):
Khoie, Rahim
Tags:
Electrons—Scattering; Modulation-doped field-effect transistors; Semiconductors--Simulation methods; Transport theory; Electrons—Scattering; Modulation-doped field-effect transistors; Semiconductors--Simulation methods; Transport theory; Computer Engineering; Electrical and Computer Engineering; Electronic Devices and Semiconductor Manufacturing; Engineering; Signal Processing; Systems and Communications
article description
By Rahim Khoie, Published on 03/01/95