Vertical nanowire transistors with low leakage current
- Citation data:
Applied Physics Letters, ISSN: 0003-6951, Vol: 85, Issue: 8, Page: 1401-1403
- Publication Year:
- Repository URL:
- https://pdxscholar.library.pdx.edu/phy_fac/106; https://works.bepress.com/rolf_koenenkamp/14
- Physics and Astronomy; Transistors; Semiconductors; Nanostructured materials; Nanowires; Physics
The fabrication of a vertical field-effect transistor with low leakage current was reported. A self-supporting flexible nanostructured polymer foil was used as a template for the fabrication of the the device. It was observed that the channel region of the transistor has a diameter of ∼100 nm and a length of ∼50 nm. It was also observed that the leakage current density was ∼50% and less than 1 nA for a total of ∼ transistors.