Vertical nanowire transistors with low leakage current

Citation data:

Applied Physics Letters, ISSN: 0003-6951, Vol: 85, Issue: 8, Page: 1401-1403

Publication Year:
2004
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Repository URL:
https://pdxscholar.library.pdx.edu/phy_fac/106; https://works.bepress.com/rolf_koenenkamp/14
DOI:
10.1063/1.1784037
Author(s):
Chen, Jie; Lux-Steiner, M. C.; Kӧnenkamp, Rolf; Klaumünzer, S.
Publisher(s):
AIP Publishing
Tags:
Physics and Astronomy; Transistors; Semiconductors; Nanostructured materials; Nanowires; Physics
article description
The fabrication of a vertical field-effect transistor with low leakage current was reported. A self-supporting flexible nanostructured polymer foil was used as a template for the fabrication of the the device. It was observed that the channel region of the transistor has a diameter of ∼100 nm and a length of ∼50 nm. It was also observed that the leakage current density was ∼50% and less than 1 nA for a total of ∼ transistors.