Challenges in deposition of wide band gap copper indium aluminum gallium selenide (CIAGS) thin films for tandem solar cells

Citation data:

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Page: 1632-1634

Publication Year:
2014
Citations 2
Citation Indexes 2
Repository URL:
https://scholar.rose-hulman.edu/physics_fac/87
DOI:
10.1109/pvsc.2014.6925232
Author(s):
Sreejith Karthikeyan; Mandip Sibakoti; Richard Liptak; Sang Ho Song; Stephen A. Campbell; Joel Abrahamson; Eray S. Aydil
Publisher(s):
Institute of Electrical and Electronics Engineers (IEEE)
Tags:
Engineering; Materials Science
conference paper description
Copper indium gallium diselenide (CIGS) based solar cells have shown efficiencies > 20% on the lab scale and are already in commercial production. Even though the optimal band gap of 1.6 eV to 1.7 eV can be achieved by increasing the Ga content, these solar cells show a maximum efficiency at ∼1.3 eV and any further increase in the Ga concentration and band gap results in lower efficiencies due to bulk and interfacial traps. This also prevents the use of wide band gap CIGS layer as a top cell for harvesting the solar cell spectrum in a tandem cell configuration. This paper reports the manufacturing challenges on the production of wide band gap aluminum doped CIGS layers (CIAGS) and devices fabricated using this material. We have fabricated 11.3% efficient solar cells using the CIAGS absorber layers.