Deep centers in n-GaN grown by reactive molecular beam epitaxy

Citation data:

Applied Physics Letters, ISSN: 0003-6951, Vol: 72, Issue: 18, Page: 2277-2279

Publication Year:
1998
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Repository URL:
https://works.bepress.com/david_look/22; https://scholarscompass.vcu.edu/egre_pubs/28; https://corescholar.libraries.wright.edu/physics/59; https://scholarscompass.vcu.edu/cgi/viewcontent.cgi?article=1123&context=egre_pubs
DOI:
10.1063/1.121274
Author(s):
Fang, Z.-Q.; Look, D. C.; Kim, W.; Fan, Z.; Botchkarev, A.; Morkoç, Hadis
Publisher(s):
AIP Publishing
Tags:
Physics and Astronomy; Electrical and Computer Engineering; Physical Sciences and Mathematics; Physics
article description
Deep centers in Si-doped n-GaN layers grown by reactive molecular beam epitaxy have been studied by deep-level transient spectroscopy as a function of growth conditions. Si-doped GaN samples grown on a Si-doped n-GaN contact layer at 800°C show a dominant trap C with activation energy E=0.44eV and capture cross-section σ=1.3×10cm, while samples grown at 750°C on an undoped semi-insulating GaN buffer show prominent traps D and E, with E=0.20eV and σ=8.4×10cm, and E=0.21eV and σ=1.6×10cm, respectively. Trap E is believed to be related to a N-vacancy defect, since the Arrhenius signature for E is very similar to the previously reported trap E, which is produced by 1-MeV electron irradiation in GaN materials grown by both metalorganic chemical-vapor deposition and hydride vapor-phase epitaxy. © 1998 American Institute of Physics.