Deep centers in a free-standing GaN layer

Citation data:

Applied Physics Letters, ISSN: 0003-6951, Vol: 78, Issue: 15, Page: 2178-2180

Publication Year:
2001
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Repository URL:
https://scholarscompass.vcu.edu/egre_pubs/43; https://corescholar.libraries.wright.edu/physics/72; https://works.bepress.com/david_look/152; https://scholarscompass.vcu.edu/cgi/viewcontent.cgi?article=1114&context=egre_pubs
DOI:
10.1063/1.1361273
Author(s):
Fang, Z-Q.; Look, David C.; Visconti, P.; Wang, D. F.; Lu, C. Z.; Yun, F.; Morkoç, H.; Park, Seong-Ju S.; Lee, K. Y.
Publisher(s):
AIP Publishing
Tags:
Physics and Astronomy; ELECTRON; Physical Sciences and Mathematics; Physics; Electrical and Computer Engineering
article description
Schottky barrier diodes, on both Ga and N faces of a ∼300-μm-thick free-standing GaN layer, grown by hydride vapor phase epitaxy (HVPE) on AlO followed by laser separation, were studied by capacitance-voltage and deep level transient spectroscopy (DLTS) measurements. From a 1/C vs V analysis, the barrier heights of Ni/Au Schottky contacts were determined to be different for the two polar faces: 1.27 eV for the Ga face, and 0.75 eV for the N face. In addition to the four common DLTS traps observed previously in other epitaxial GaN including HVPE-grown GaN a new trap B' with activation energy E=0.53 eV was found in the Ga-face sample. Also, trap E (E=0.18 eV), believed to be related to the N vacancy, was found in the N-face sample, and trap C (E=0.35 eV) was in the Ga-face sample. Trap C may have arisen from reactive-ion-etching damage. © 2001 American Institute of Physics.