Investigation of Process Induced Defects Using a LTO Process

Citation data:

Vol: 4, Issue: 1

Publication Year:
1990
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Repository URL:
https://scholarworks.rit.edu/ritamec/vol4/iss1/12
Author(s):
DeSantis, Joseph
Tags:
LTO Process; Bipolar Process; Engineering
paper description
The effects of process induced defects, such as dislocations and/or oxide induced stacking faults, were investigated for a bipolar process employing solid diffusion sources. Carborundum BN975 Boron Sources have a low temperature oxide (LTD) step to minimize defects. Two bipolar processes, one with and one without LTD were run and electrical tests done to evaluate device characteristics. ~t this point results were inconclusive.