Nanoelectric memristor device with dilute magnetic semiconductors

Publication Year:
2013
Usage 19
Downloads 17
Abstract Views 2
Repository URL:
https://utdr.utoledo.edu/utpatents/45
Author(s):
Jha, Rashmi; Ordosgoitti, Jorhan; Long, Branden
Tags:
257/537; 257/536; 257/E45.002; 257/E45.003
patent description
A nanoelectric memristor device includes a first electrode and a layer of oxygen-vacancy-rich metal oxide deposited upon a surface of the first electrode. A layer of oxygen-rich/stochiometric metal oxide is deposited upon a surface of the oxygen-vacancy-rich metal oxide layer that is opposite from said first electrode. At least one of the oxygen-vacancy-rich metal oxide and oxygen-rich/stochiometric metal oxide layers is doped with one of a magnetic and a paramagnetic material. A second electrode is adjacent to a surface of the oxygen-rich/stochiometric metal oxide layer that is opposite from the oxygen-rich/stochiometric metal oxide layer.