Implementation of Low-Power Electronic Devices Using Solution-Processed Tantalum Pentoxide Dielectric

Citation data:

Advanced Functional Materials, ISSN: 1616-301X, Vol: 28, Issue: 28

Publication Year:
2018
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Repository URL:
https://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.201704215
DOI:
10.1002/adfm.201704215
Author(s):
Jungwoo Heo; Song Yi Park; Jae Won Kim; Seyeong Song; Yung Jin Yoon; Jaeki Jeong; Hyungsu Jang; Kang Taek Lee; Jung Hwa Seo; Bright Walker; Jin Young Kim Show More Hide
Publisher(s):
Wiley
Tags:
Materials Science; Physics and Astronomy; Chemistry; field‐ effect transistors; high‐ κ; solution‐ processing; tantalum oxide; thin film transistors
article description
The development of solution-processed field effect transistors (FETs) based on organic and hybrid materials over the past two decades has demonstrated the incredible potential in these technologies. However, solution processed FETs generally require impracticably high voltages to switch on and off, which precludes their application in low-power devices and prevent their integration with standard logic circuitry. Here, a universal and environmentally benign solution-processing method for the preparation of TaO, HfOand ZrOamorphous dielectric thin films is demonstrated. High mobility CdS FETs are fabricated on such high-κ dielectric substrates entirely via solution-processing. The highest mobility, 2.97 cmVsis achieved in the device with TaOdielectric with a low threshold voltage of 1.00 V, which is higher than the mobility of the reference CdS FET with SiOdielectric with an order of magnitude decrease in threshold voltage as well. Because these FETs can be operated at less than 5 V, they may potentially be integrated with existing logic and display circuitry without significant signal amplification. This report demonstrates high-mobility FETs using solution-processed TaOdielectrics with drastically reduced power consumption; ≈95% reduction compared to that of the device with a conventional SiOgate dielectric.