Seed-Assisted Growth of Single-Crystalline Patterned Graphene Domains on Hexagonal Boron Nitride by Chemical Vapor Deposition.

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Nano letters, ISSN: 1530-6992, Vol: 16, Issue: 10, Page: 6109-6116

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Song, Xiuju; Gao, Teng; Nie, Yufeng; Zhuang, Jianing; Sun, Jingyu; Ma, Donglin; Shi, Jianping; Lin, Yuanwei; Ding, Feng; Zhang, Yanfeng; Liu, Zhongfan Show More Hide
American Chemical Society (ACS)
Chemical Engineering; Chemistry; Materials Science; Physics and Astronomy; Engineering; characterizations; controllable growth; chemical vapor deposition; Graphene and hexagonal boron nitride heterostructures; seed-assisted growth
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Vertical heterostructures based on two-dimensional layered materials, such as stacked graphene and hexagonal boron nitride (G/h-BN), have stimulated wide interest in fundamental physics, material sciences and nanoelectronics. To date, it still remains challenging to obtain high quality G/h-BN heterostructures concurrently with controlled nucleation density and thickness uniformity. In this work, with the aid of the well-defined poly(methyl methacrylate) seeds, effective control over the nucleation densities and locations of graphene domains on the predeposited h-BN monolayers was realized, leading to the formation of patterned G/h-BN arrays or continuous films. Detailed spectroscopic and morphological characterizations further confirmed that ∼85.7% of such monolayer graphene domains were of single-crystalline nature with their domain sizes predetermined throughout seed interspacing. Density functional theory calculations suggested that a self-terminated growth mechanism can be applied for the related graphene growth on h-BN/Cu. In turn, as-constructed field-effect transistor arrays based on such synthesized single-crystalline G/h-BN patterning were found to be compatible with fabricating devices with nice and steady performance, hence holding great promise for the development of next-generation graphene-based electronics.