Support-Free Transfer of Ultrasmooth Graphene Films Facilitated by Self-Assembled Monolayers for Electronic Devices and Patterns.

Citation data:

ACS nano, ISSN: 1936-086X, Vol: 10, Issue: 1, Page: 1404-10

Publication Year:
2016
Usage 2
Abstract Views 2
Captures 62
Readers 62
Social Media 6
Tweets 6
Citations 10
Citation Indexes 10
Repository URL:
http://scholarworks.unist.ac.kr/handle/201301/21015
PMID:
26701198
DOI:
10.1021/acsnano.5b06842
Author(s):
Wang, Bin, Huang, Ming, Tao, Li, Lee, Sun Hwa, Jang, A-Rang, Li, Bao-Wen, Shin, Hyeon Suk, Akinwande, Deji, Ruoff, Rodney S.
Publisher(s):
American Chemical Society (ACS), AMER CHEMICAL SOC
Tags:
Materials Science, Engineering, Physics and Astronomy, GFET, graphene, pattern, self-assembled monolayer, support-free, transfer, ultrasmooth
Most Recent Tweet View All Tweets
article description
We explored a support-free method for transferring large area graphene films grown by chemical vapor deposition to various fluoric self-assembled monolayer (F-SAM) modified substrates including SiO2/Si wafers, polyethylene terephthalate films, and glass. This method yields clean, ultrasmooth, and high-quality graphene films for promising applications such as transparent, conductive, and flexible films due to the absence of residues and limited structural defects such as cracks. The F-SAM introduced in the transfer process can also lead to graphene transistors with enhanced field-effect mobility (up to 10,663 cm(2)/Vs) and resistance modulation (up to 12×) on a standard silicon dioxide dielectric. Clean graphene patterns can be realized by transfer of graphene onto only the F-SAM modified surfaces.