Support-Free Transfer of Ultrasmooth Graphene Films Facilitated by Self-Assembled Monolayers for Electronic Devices and Patterns.

Citation data:

ACS nano, ISSN: 1936-086X, Vol: 10, Issue: 1, Page: 1404-10

Publication Year:
Usage 2
Abstract Views 2
Captures 73
Readers 73
Social Media 3
Tweets 3
Citations 20
Citation Indexes 20
Repository URL:
Wang, Bin; Huang, Ming; Tao, Li; Lee, Sun Hwa; Jang, A-Rang; Li, Bao-Wen; Shin, Hyeon Suk; Akinwande, Deji; Ruoff, Rodney S.
American Chemical Society (ACS); AMER CHEMICAL SOC
Materials Science; Engineering; Physics and Astronomy; GFET; graphene; pattern; self-assembled monolayer; support-free; transfer; ultrasmooth
Most Recent Tweet View All Tweets
article description
We explored a support-free method for transferring large area graphene films grown by chemical vapor deposition to various fluoric self-assembled monolayer (F-SAM) modified substrates including SiO2/Si wafers, polyethylene terephthalate films, and glass. This method yields clean, ultrasmooth, and high-quality graphene films for promising applications such as transparent, conductive, and flexible films due to the absence of residues and limited structural defects such as cracks. The F-SAM introduced in the transfer process can also lead to graphene transistors with enhanced field-effect mobility (up to 10,663 cm(2)/Vs) and resistance modulation (up to 12×) on a standard silicon dioxide dielectric. Clean graphene patterns can be realized by transfer of graphene onto only the F-SAM modified surfaces.