Oxygen-Promoted Chemical Vapor Deposition of Graphene on Copper: A Combined Modeling and Experimental Study.

Citation data:

ACS nano, ISSN: 1936-086X, Vol: 12, Issue: 9, Page: 9372-9380

Publication Year:
2018
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Repository URL:
https://pubs.acs.org/doi/10.1021/acsnano.8b04460
PMID:
30148597
DOI:
10.1021/acsnano.8b04460
Author(s):
Srinivasan, Bharathi Madurai; Hao, Yufeng; Hariharaputran, Ramanarayan; Rywkin, Shanti; Hone, James C; Colombo, Luigi; Ruoff, Rodney S; Zhang, Yong-Wei
Publisher(s):
American Chemical Society (ACS)
Tags:
Materials Science; Engineering; Physics and Astronomy; oxygen concentration; growth rate; nucleation density; phase field model; chemical vapor deposition
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article description
Mass production of large, high-quality single-crystalline graphene is dependent on a complex coupling of factors including substrate material, temperature, pressure, gas flow, and the concentration of carbon and hydrogen species. Recent studies have shown that the oxidation of the substrate surface such as Cu before the introduction of the C precursor, methane, results in a significant increase in the growth rate of graphene while the number of nuclei on the surface of the Cu substrate decreases. We report on a phase-field model, where we include the effects of oxygen on the number of nuclei, the energetics at the growth front, and the graphene island morphology on Cu. Our calculations reproduce the experimental observations, thus validating the proposed model. Finally, and more importantly, we present growth rate from our model as a function of O concentration and precursor flux to guide the efficient growth of large single-crystal graphene of high quality.