A High-k Fluorinated P(VDF-TrFE)-g-PMMA Gate Dielectric for High-Performance Flexible Field-Effect Transistors

Citation data:

Advanced Functional Materials, ISSN: 1616-3028, Vol: 28, Issue: 4

Publication Year:
2018
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Citations 7
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Repository URL:
http://scholarworks.unist.ac.kr/handle/201301/22803
DOI:
10.1002/adfm.201704780
Author(s):
Shin, Eul-Yong; Cho, Hye Jin; Jung, Sungwoo; Yang, Changduk; Noh, Yong-Young
Publisher(s):
Wiley; WILEY-V C H VERLAG GMBH
Tags:
Materials Science; Physics and Astronomy; Chemistry; fl uorinated polymers; grafted copolymers; high-k polymer dielectrics; organic fi eld-effect transistors
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article description
A newly synthesized high-k polymeric insulator for use as gate dielectric layer for organic field-effect transistors (OFETs) obtained by grafting poly(methyl methacrylate) (PMMA) in poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) via atom transfer radical polymerization transfer is reported. This material design concept intents to tune the electrical properties of the gate insulating layer (capacitance, leakage current, breakdown voltage, and operational stability) of the high-k fluorinated polymer dielectric without a large increase in operating voltage by incorporating an amorphous PMMA as an insulator. By controlling the grafted PMMA percentage, an optimized P(VDF-TrFE)-g-PMMA with 7 mol% grafted PMMA showing reasonably high capacitance (23–30 nF cm) with low voltage operation and negligible current hysteresis is achieved. High-performance low-voltage-operated top-gate/bottom-contact OFETs with widely used high mobility polymer semiconductors, poly[[2,5-bis(2-octyldodecyl)-2,3,5,6-tetrahydro-3,6-dioxopyrrolo [3,4-c]pyrrole-1,4-diyl]-alt-[[2,2′-(2,5-thiophene)bis-thieno(3,2-b)thiophene]-5,5′-diyl]] (DPPT-TT), and poly([N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)) are demonstrated here. DPPT-TT OFETs with P(VDF-TrFE)-g-PMMA gate dielectrics exhibit a reasonably high field-effect mobility of over 1 cmVswith excellent operational stability.