Highly transparent and stretchable field-effect transistor sensors using graphene-nanowire hybrid nanostructures.

Citation data:

Advanced materials (Deerfield Beach, Fla.), ISSN: 1521-4095, Vol: 27, Issue: 21, Page: 3292-7

Publication Year:
2015
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Abstract Views 10
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Citations 56
Citation Indexes 56
Repository URL:
http://scholarworks.unist.ac.kr/handle/201301/12284
PMID:
25885929
DOI:
10.1002/adma.201500710
Author(s):
Kim, Joohee, Lee, Mi-Sun, Jeon, Sangbin, Kim, Minji, Kim, Sungwon, Kim, Kukjoo, Bien, Franklin, Hong, Sung You, Park, Jang-Ung
Publisher(s):
Wiley-Blackwell, WILEY-V C H VERLAG GMBH
Tags:
Materials Science, Engineering, field-effect transistors, graphene, hybrid, nanowires, wearable electronics
article description
Transparent and stretchable electronics with remarkable bendability, conformability, and lightness are the key attributes for sensing or wearable devices. Transparent and stretchable field-effect transistor sensors using graphene-metal nanowire hybrid nanostructures have high mobility (≈3000 cm(2) V(-1) s(-1) ) with low contact resistance, and they are transferrable onto a variety of substrates. The integration of these sensors for RLC circuits enables wireless monitoring.

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