Very high frequency plasma reactant for atomic layer deposition

Citation data:

Applied Surface Science, ISSN: 0169-4332, Vol: 387, Page: 109-117

Publication Year:
2016
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Repository URL:
http://scholarworks.unist.ac.kr/handle/201301/20068
DOI:
10.1016/j.apsusc.2016.06.048
Author(s):
Oh, Il-Kwon, Yoo, Gilsang, Yoon, Chang Mo, Kim, Tae Hyung, Yeom, Geun Young, Kim, Kangsik, Lee, Zonghoon, Jung, Hanearl, Lee, Chang Wan, Kim, Hyungjun, Lee, Han-Bo-Ram Show More Hide
Publisher(s):
Elsevier BV, ELSEVIER SCIENCE BV
Tags:
Materials Science, Damage-free deposition, High-k dielectrics, Interlayer-free deposition, Plasma-enhanced atomic layer deposition, Very high frequency plasma source
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article description
Although plasma-enhanced atomic layer deposition (PE-ALD) results in several benefits in the formation of high-k dielectrics, including a low processing temperature and improved film properties compared to conventional thermal ALD, energetic radicals and ions in the plasma cause damage to layer stacks, leading to the deterioration of electrical properties. In this study, the growth characteristics and film properties of PE-ALD AlO were investigated using a very-high-frequency (VHF) plasma reactant. Because VHF plasma features a lower electron temperature and higher plasma density than conventional radio frequency (RF) plasma, it has a larger number of less energetic reaction species, such as radicals and ions. VHF PE-ALD AlO shows superior physical and electrical properties over RF PE-ALD AlO, including high growth per cycle, excellent conformality, low roughness, high dielectric constant, low leakage current, and low interface trap density. In addition, interlayer-free AlO on Si was achieved in VHF PE-ALD via a significant reduction in plasma damage. VHF PE-ALD will be an essential process to realize nanoscale devices that require precise control of interfaces and electrical properties.

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