Self-assembled, highly crystalline porous ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) interlayer for Si/organic hybrid solar cells

Citation data:

Nano Energy, ISSN: 2211-2855, Vol: 41, Page: 243-250

Publication Year:
2017
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Citations 4
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Repository URL:
http://scholarworks.unist.ac.kr/handle/201301/22916
DOI:
10.1016/j.nanoen.2017.09.033
Author(s):
Kang, Sung Bum; Jeong, Myeong Hun; Choi, In Young; Sohn, So-Dam; Kim, Su Han; Shin, Hyung-Joon; Park, Won Il; Shin, Jae Cheol; Song, Myoung Hoon; Choi, Kyoung Jin
Publisher(s):
Elsevier BV
Tags:
Energy; Materials Science; Engineering; ferroelectric materials; thin porous films; polymers; breath figure; solar cells
article description
Ferroelectric polymers can effectively improve the photovoltaic performance of solar cells, inducing an electric field to promote the dissociation of electron-hole pairs, with the thus generated charges collected from open pores. Since such performance enhancement requires materials with a unique porous crystalline structure, we herein present a novel route to highly crystalline and porous poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) thin films utilizing a modified breath figure method based on spin coating. The key feature of the above method is the addition of small amounts of water to the acetone/P(VDF-TrFE) solution to produce porous ferroelectric thin films which have significantly higher crystallinity values than nanostructures or films prepared by other methods. Furthermore, n -Si / poly(3,4-ethylene dioxy thiophene):poly(styrene sulfonate) hybrid solar cells with porous P(VDF-TrFE) interlayers are demonstrated to exhibit spontaneous polarization sufficient for increasing their open circuit voltages and fill factors. Finite-difference time-domain simulation reveals that the electric field due to the above spontaneous polarization increases the built-in electric field of the Schottky junction between n -Si and poly(3,4-ethylene dioxy thiophene):poly(styrenesulfonate) and reduces the reverse leakage current of the Schottky diode. Thus, the organic ferroelectric thin films with controlled porosity proposed in this study are well suited for a broad range of optoelectronic applications.