Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil

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Science Bulletin, ISSN: 2095-9273, Vol: 62, Issue: 15, Page: 1074-1080

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Xu, Xiaozhi; Zhang, Zhihong; Dong, Jichen; Yi, Ding; Niu, Jingjing; Wu, Muhong; Lin, Li; Yin, Rongkang; Li, Mingqiang; Zhou, Jingyuan; Wang, Shaoxin; Sun, Junliang; Duan, Xiaojie; Gao, Peng; Jiang, Ying; Wu, Xiaosong; Peng, Hailin; Ruoff, Rodney S.; Liu, Zhongfan; Yu, Dapeng; Wang, Enge; Ding, Feng; Liu, Kaihui Show More Hide
Multidisciplinary; Single-crystal; Industrial Cu; Graphene; Ultrafast; Epitaxial
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A foundation of the modern technology that uses single-crystal silicon has been the growth of high-quality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality (ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20 min, of a graphene film of (5 × 50) cm 2 dimension with >99% ultra-highly oriented grains. This growth was achieved by: (1) synthesis of metre-sized single-crystal Cu(1 1 1) foil as substrate; (2) epitaxial growth of graphene islands on the Cu(1 1 1) surface; (3) seamless merging of such graphene islands into a graphene film with high single crystallinity and (4) the ultrafast growth of graphene film. These achievements were realized by a temperature-gradient-driven annealing technique to produce single-crystal Cu(1 1 1) from industrial polycrystalline Cu foil and the marvellous effects of a continuous oxygen supply from an adjacent oxide. The as-synthesized graphene film, with very few misoriented grains (if any), has a mobility up to ∼23,000 cm 2 V −1 s −1 at 4 K and room temperature sheet resistance of ∼230 Ω/□. It is very likely that this approach can be scaled up to achieve exceptionally large and high-quality graphene films with single crystallinity, and thus realize various industrial-level applications at a low cost.