Catalytic Conversion of Hexagonal Boron Nitride to Graphene for In-Plane Heterostructures.

Citation data:

Nano letters, ISSN: 1530-6992, Vol: 15, Issue: 7, Page: 4769-75

Publication Year:
2015
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Repository URL:
http://scholarworks.unist.ac.kr/handle/201301/16402
PMID:
26083832
DOI:
10.1021/acs.nanolett.5b01704
Author(s):
Kim, Gwangwoo; Lim, Hyunseob; Ma, Kyung Yeol; Jang, A-Rang; Ryu, Gyeong Hee; Jung, Minbok; Shin, Hyung-Joon; Lee, Zonghoon; Shin, Hyeon Suk
Publisher(s):
American Chemical Society (ACS); AMER CHEMICAL SOC
Tags:
Chemical Engineering; Chemistry; Materials Science; Physics and Astronomy; Engineering; in-plane heterostructure; graphene; hexagonal boron nitride; chemical vapor deposition; platinum
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article description
Heterostructures of hexagonal boron nitride (h-BN) and graphene have attracted a great deal of attention for potential applications in 2D materials. Although several methods have been developed to produce this material through the partial substitution reaction of graphene, the reverse reaction has not been reported. Though the endothermic nature of this reaction might account for the difficulty and previous absence of such a process, we report herein a new chemical route in which the Pt substrate plays a catalytic role. We propose that this reaction proceeds through h-BN hydrogenation; subsequent graphene growth quickly replaces the initially etched region. Importantly, this conversion reaction enables the controlled formation of patterned in-plane graphene/h-BN heterostructures, without needing the commonly employed protecting mask, simply by using a patterned Pt substrate.