Atomic Scale Study on Growth and Heteroepitaxy of ZnO Monolayer on Graphene.

Citation data:

Nano letters, ISSN: 1530-6992, Vol: 17, Issue: 1, Page: 120-127

Publication Year:
2017
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Repository URL:
http://scholarworks.unist.ac.kr/handle/201301/21093
PMID:
28002942
DOI:
10.1021/acs.nanolett.6b03621
Author(s):
Hong, Hyo-Ki, Jo, Junhyeon, Hwang, Daeyeon, Lee, Jongyeong, Kim, Na Yeon, Son, Seungwoo, Kim, Jung Hwa, Jin, Mi-Jin, Jun, Young Chul, Erni, Rolf, Kwak, Sang Kyu, Yoo, Jung-Woo, Lee, Zonghoon Show More Hide
Publisher(s):
American Chemical Society (ACS), AMER CHEMICAL SOC
Tags:
Chemical Engineering, Chemistry, Materials Science, Physics and Astronomy, Engineering, 2D materials, atomically thin, graphene, Heteroepitaxy, quantum confinement effect, ZnO monolayer
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article description
Atomically thin semiconducting oxide on graphene carries a unique combination of wide band gap, high charge carrier mobility, and optical transparency, which can be widely applied for optoelectronics. However, study on the epitaxial formation and properties of oxide monolayer on graphene remains unexplored due to hydrophobic graphene surface and limits of conventional bulk deposition technique. Here, we report atomic scale study of heteroepitaxial growth and relationship of a single-atom-thick ZnO layer on graphene using atomic layer deposition. We demonstrate atom-by-atom growth of zinc and oxygen at the preferential zigzag edge of a ZnO monolayer on graphene through in situ observation. We experimentally determine that the thinnest ZnO monolayer has a wide band gap (up to 4.0 eV), due to quantum confinement and graphene-like structure, and high optical transparency. This study can lead to a new class of atomically thin two-dimensional heterostructures of semiconducting oxides formed by highly controlled epitaxial growth.

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