Effect of Al 2 O 3 Deposition on Performance of Top-Gated Monolayer MoS 2 -Based Field Effect Transistor

Citation data:

ACS Applied Materials & Interfaces, ISSN: 1944-8244, Vol: 8, Issue: 41, Page: 28130-28135

Publication Year:
2016
Captures 13
Readers 13
Citations 4
Citation Indexes 4
Repository URL:
http://scholarworks.unist.ac.kr/handle/201301/20633
DOI:
10.1021/acsami.6b07271
Author(s):
Song, Jeong-Gyu, Kim, Seok Jin, Woo, Whang Je, Kim, Youngjin, Oh, Il-Kwon, Ryu, Gyeong Hee, Lee, Zonghoon, Lim, Jun Hyung, Park, Jusang, Kim, Hyungjun
Publisher(s):
American Chemical Society (ACS), AMER CHEMICAL SOC
Tags:
Materials Science, atomic layer deposition, field-effect transistor, molybdenum disulfide, transition-metal dichalcogenides, two-dimensional materials
article description
Deposition of high-k dielectrics on two-dimensional MoS is an important process for successful application of the transition-metal dichalcogenides in electronic devices. Here, we show the effect of HO reactant exposure on monolayer (1L) MoS during atomic layer deposition (ALD) of AlO. The results showed that the ALD-AlO caused degradation of the performance of 1L MoS field effect transistors (FETs) owing to the formation of Mo-O bonding and trapping of HO molecules at the AlO/MoS interface. Furthermore, we demonstrated that reduced duration of exposure to HO reactant and postdeposition annealing were essential to the enhancement of the performance of top-gated 1L MoS FETs. The mobility and on/off current ratios were increased by factors of approximately 40 and 10, respectively, with reduced duration of exposure to HO reactant and with postdeposition annealing.

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