Highly luminescent InP/GaP/ZnS nanocrystals and their application to white light-emitting diodes.

Citation data:

Journal of the American Chemical Society, ISSN: 1520-5126, Vol: 134, Issue: 8, Page: 3804-9

Publication Year:
2012
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Citations 141
Citation Indexes 141
Repository URL:
http://scholarworks.unist.ac.kr/handle/201301/16943
PMID:
22303916
DOI:
10.1021/ja210211z
Author(s):
Kim, Sungwoo, Kim, Taehoon, Kang, Meejae, Kwak, Seong Kwon, Yoo, Tae Wook, Park, Lee Soon, Yang, Ilseung, Hwang, Sunjin, Lee, Jung Eun, Kim, Seong Keun, Kim, Sang-Wook Show More Hide
Publisher(s):
American Chemical Society (ACS), AMER CHEMICAL SOC
Tags:
Chemical Engineering, Chemistry, Biochemistry, Genetics and Molecular Biology, In-situ methods, InP, Luminous efficiency, White light emitting diodes
article description
Highly stable and luminescent InP/GaP/ZnS QDs with a maximum quantum yield of 85% were synthesized by in situ method. The GaP shell rendered passivation of the surface and removed the traps. TCSPC data showed an evidence for the GaP shell. InP/GaP/ZnS QDs show better stability than InP/ZnS. We studied the optical properties of white QD-LEDs corresponding to various QD concentrations. Among various concentrations, the white QD-LEDs with 0.5 mL of QDs exhibited a luminous efficiency of 54.71 lm/W, Ra of 80.56, and CCT of 7864 K.

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