Birch-Type Hydrogenation of Few-Layer Graphenes: Products and Mechanistic Implications

Citation data:

Journal of the American Chemical Society, ISSN: 0002-7863, Vol: 138, Issue: 45, Page: 14980-14986

Publication Year:
2016
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Repository URL:
http://scholarworks.unist.ac.kr/handle/201301/20683
DOI:
10.1021/jacs.6b08625
Author(s):
Zhang, Xu, Huang, Yuan, Chen, Shanshan, Kim, Na Yeon, Kim, Wontaek, Schilter, David, Biswal, Mandakini, Li, Baowen, Lee, Zonghoon, Ryu, Sunmin, Bielawski, Christopher W., Bacsa, Wolfgang S., Ruoff, Rodney S. Show More Hide
Publisher(s):
American Chemical Society (ACS), AMER CHEMICAL SOC
Tags:
Chemical Engineering, Chemistry, Biochemistry, Genetics and Molecular Biology
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article description
Few-layer graphenes, supported on Si with a superficial oxide layer, were subjected to a Birch-type reduction using Li and HO as the electron and proton donors, respectively. The extent of hydrogenation for bilayer graphene was estimated at 1.6-24.1% according to Raman and X-ray photoelectron spectroscopic data. While single-layer graphene reacts uniformly, few-layer graphenes were hydrogenated inward from the edges and/or defects. The role of these reactive sites was reflected in the inertness of pristine few-layer graphenes whose edges were sealed. Hydrogenation of labeled bilayer (C/C) and trilayer (C/C/C) graphenes afforded products whose sheets were hydrogenated to the same extent, implicating passage of reagents between the graphene layers and equal decoration of each graphene face. The reduction of few-layer graphenes introduces strain, allows tuning of optical transmission and fluorescence, and opens synthetic routes to long sought-after films containing sp-hybridized carbon.

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