Birch-Type Hydrogenation of Few-Layer Graphenes: Products and Mechanistic Implications

Citation data:

Journal of the American Chemical Society, ISSN: 0002-7863, Vol: 138, Issue: 45, Page: 14980-14986

Publication Year:
Usage 1
Abstract Views 1
Captures 16
Readers 16
Mentions 1
News Mentions 1
Citations 3
Citation Indexes 3
Repository URL:
Zhang, Xu, Huang, Yuan, Chen, Shanshan, Kim, Na Yeon, Kim, Wontaek, Schilter, David, Biswal, Mandakini, Li, Baowen, Lee, Zonghoon, Ryu, Sunmin, Bielawski, Christopher W., Bacsa, Wolfgang S., Ruoff, Rodney S. Show More Hide
American Chemical Society (ACS), AMER CHEMICAL SOC
Chemical Engineering, Chemistry, Biochemistry, Genetics and Molecular Biology
Most Recent News Mention
article description
Few-layer graphenes, supported on Si with a superficial oxide layer, were subjected to a Birch-type reduction using Li and HO as the electron and proton donors, respectively. The extent of hydrogenation for bilayer graphene was estimated at 1.6-24.1% according to Raman and X-ray photoelectron spectroscopic data. While single-layer graphene reacts uniformly, few-layer graphenes were hydrogenated inward from the edges and/or defects. The role of these reactive sites was reflected in the inertness of pristine few-layer graphenes whose edges were sealed. Hydrogenation of labeled bilayer (C/C) and trilayer (C/C/C) graphenes afforded products whose sheets were hydrogenated to the same extent, implicating passage of reagents between the graphene layers and equal decoration of each graphene face. The reduction of few-layer graphenes introduces strain, allows tuning of optical transmission and fluorescence, and opens synthetic routes to long sought-after films containing sp-hybridized carbon.

This article has 0 Wikipedia mention.