Thienoisoindigo-Based Semiconductor Nanowires Assembled with 2-Bromobenzaldehyde via Both Halogen and Chalcogen Bonding.

Citation data:

Scientific reports, ISSN: 2045-2322, Vol: 8, Issue: 1, Page: 14448

Publication Year:
2018
Captures 2
Readers 2
Repository URL:
http://scholarworks.unist.ac.kr/handle/201301/25106
PMID:
30262857
DOI:
10.1038/s41598-018-32486-z
Author(s):
Noh, Juran; Jung, Sungwoo; Koo, Dong Geon; Kim, Gyoungsik; Choi, Kyoung Soon; Park, JaeHong; Shin, Tae Joo; Yang, Changduk; Park, Juhyun
Publisher(s):
Springer Nature America, Inc; NATURE PUBLISHING GROUP
Tags:
Multidisciplinary
article description
We fabricated nanowires of a conjugated oligomer and applied them to organic field-effect transistors (OFETs). The supramolecular assemblies of a thienoisoindigo-based small molecular organic semiconductor (TIIG-Bz) were prepared by co-precipitation with 2-bromobenzaldehyde (2-BBA) via a combination of halogen bonding (XB) between the bromide in 2-BBA and electron-donor groups in TIIG-Bz, and chalcogen bonding (CB) between the aldehyde in 2-BBA and sulfur in TIIG-Bz. It was found that 2-BBA could be incorporated into the conjugated planes of TIIG-Bz via XB and CB pairs, thereby increasing the π - π stacking area between the conjugated planes. As a result, the driving force for one-dimensional growth of the supramolecular assemblies via π - π stacking was significantly enhanced. TIIG-Bz/2-BBA nanowires were used to fabricate OFETs, showing significantly enhanced charge transfer mobility compared to OFETs based on pure TIIG-Bz thin films and nanowires, which demonstrates the benefit of nanowire fabrication using 2-BBA.