Enhanced crystallinity of epitaxial graphene grown on hexagonal SiC surface with molybdenum plate capping.

Citation data:

Scientific reports, ISSN: 2045-2322, Vol: 5, Issue: 1, Page: 9615

Publication Year:
2015
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Repository URL:
http://scholarworks.unist.ac.kr/handle/201301/11665
PMID:
25905989
DOI:
10.1038/srep09615
Author(s):
Jin, Han Byul; Jeon, Youngeun; Jung, Sungchul; Modepalli, Vijayakumar; Kang, Hyun Suk; Lee, Byung Cheol; Ko, Jae-Hyeon; Shin, Hyung-Joon; Yoo, Jung-Woo; Kim, Sung Youb; Kwon, Soon-Yong; Eom, Daejin; Park, Kibog Show More Hide
Publisher(s):
Springer Nature; NATURE PUBLISHING GROUP
Tags:
Multidisciplinary; Epitaxial Graphene, Silicon Carbide, Molybdenum Plate Capping, Thermal Radiation Mirroring, Confinement Controlled Growth, Field Effect Transistor, Silicon Absorber
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article description
The crystallinity of epitaxial graphene (EG) grown on a Hexagonal-SiC substrate is found to be enhanced greatly by capping the substrate with a molybdenum plate (Mo-plate) during vacuum annealing. The crystallinity enhancement of EG layer grown with Mo-plate capping is confirmed by the significant change of measured Raman spectra, compared to the spectra for no capping. Mo-plate capping is considered to induce heat accumulation on SiC surface by thermal radiation mirroring and raise Si partial pressure near surface by confining the sublimated Si atoms between SiC substrate and Mo-plate, which would be the essential contributors of crystallinity enhancement.