High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance

Citation data:

Nanoscale, ISSN: 2040-3364, Vol: 8, Issue: 39, Page: 17113-17121

Publication Year:
2016
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Repository URL:
http://scholarworks.unist.ac.kr/handle/201301/20632
DOI:
10.1039/c6nr05577j
Author(s):
Kim, S,-Y., Kim, K., Hwang, Y.H., Park, J., Jang, J., Nam, Y., Kang, Y., Kim, M., Park, H.J., Lee, Zonghoon, Choi, Jaehyouk, Kim, Y., Jeong, S., Bae, B.-S., Park, Jang-Ung Show More Hide
Publisher(s):
Royal Society of Chemistry (RSC), ROYAL SOC CHEMISTRY, The Royal Society of Chemistry
Tags:
Materials Science
article description
As demands for high pixel densities and wearable forms of displays increase, high-resolution printing technologies to achieve high performance transistors beyond current amorphous silicon levels and to allow low-temperature solution processability for plastic substrates have been explored as key processes in emerging flexible electronics. This study describes electrohydrodynamic inkjet (e-jet) technology for direct printing of oxide semiconductor thin film transistors (TFTs) with high resolution (minimum line width: 2 μm) and superb performance, including high mobility (∼230 cmVs). Logic operations of the amplifier circuits composed of these e-jet-printed metal oxide semiconductor (MOS) TFTs demonstrate their high performance. Printed InO TFTs with e-jet printing-assisted high-resolution S/D electrodes were prepared, and the direct printing of passivation layers on these channels enhanced their gate-bias stabilities significantly. Moreover, low process temperatures (<250 °C) enable the use of thin plastic substrates; highly flexible and stretchable TFT arrays have been demonstrated, suggesting promise for next-generation printed electronics.

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