High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance

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Nanoscale, ISSN: 2040-3364, Vol: 8, Issue: 39, Page: 17113-17121

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Kim, S,-Y., Kim, K., Hwang, Y.H., Park, J., Jang, J., Nam, Y., Kang, Y., Kim, M., Park, H.J., Lee, Zonghoon, Choi, Jaehyouk, Kim, Y., Jeong, S., Bae, B.-S., Park, Jang-Ung Show More Hide
Royal Society of Chemistry (RSC), ROYAL SOC CHEMISTRY, The Royal Society of Chemistry
Materials Science
article description
As demands for high pixel densities and wearable forms of displays increase, high-resolution printing technologies to achieve high performance transistors beyond current amorphous silicon levels and to allow low-temperature solution processability for plastic substrates have been explored as key processes in emerging flexible electronics. This study describes electrohydrodynamic inkjet (e-jet) technology for direct printing of oxide semiconductor thin film transistors (TFTs) with high resolution (minimum line width: 2 μm) and superb performance, including high mobility (∼230 cm V s). Logic operations of the amplifier circuits composed of these e-jet-printed metal oxide semiconductor (MOS) TFTs demonstrate their high performance. Printed InO TFTs with e-jet printing-assisted high-resolution S/D electrodes were prepared, and the direct printing of passivation layers on these channels enhanced their gate-bias stabilities significantly. Moreover, low process temperatures (<250 °C) enable the use of thin plastic substrates; highly flexible and stretchable TFT arrays have been demonstrated, suggesting promise for next-generation printed electronics.