Effect of interface voids on electroluminescence colors for ZnO microdisk/ p -GaN heterojunction light-emitting diodes

Citation data:

Applied Physics Letters, ISSN: 0003-6951, Vol: 111, Issue: 14

Publication Year:
2017
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Repository URL:
http://scholarworks.unist.ac.kr/handle/201301/22889
DOI:
10.1063/1.4997272
Author(s):
Mo, Ran; Choi, Ji Eun; Kim, Hyeong Jin; Jeong, Junseok; Kim, Jong Chan; Kim, Yong-Jin; Jeong, Hu Young; Hong, Young Joon
Publisher(s):
AIP Publishing; AMER INST PHYSICS
Tags:
Physics and Astronomy
article description
This study investigates the influence of voids on the electroluminescence (EL) emission color of ZnO microdisk/p-GaN heterojunction light-emitting diodes (LEDs). For this study, position-controlled microdisk arrays were fabricated on patterned p-GaN via wet chemical epitaxy of ZnO, and specifically, the use of trisodium citrate dihydrate (TCD) yielded high-density voids at the bottom of the microdisk. Greenish yellow or whitish blue EL was emitted from the microdisk LEDs formed with or without TCD, respectively, at reverse-bias voltages. Such different EL colors were found to be responsible for the relative EL intensity ratio between indigo and yellow emission peaks, which were originated from radiative recombination at p-GaN and ZnO, respectively. The relative EL intensity between dichromatic emissions is discussed in terms of (i) junction edge effect provoked by interfacial voids and (ii) electron tunneling probability depending on the depletion layer geometry.