Local electronic density of states of a semiconducting carbon nanotube interface

Citation data:

Physical Review B - Condensed Matter and Materials Physics, ISSN: 1098-0121, Vol: 71, Issue: 23

Publication Year:
2005
Captures 24
Readers 24
Citations 11
Citation Indexes 11
Repository URL:
http://scholarworks.unist.ac.kr/handle/201301/7116
DOI:
10.1103/physrevb.71.235402
Author(s):
Kim, Hajin; Lee, Jhinhwan; Lee, Sungjun; Kuk, Young; Park, Ji-Young; Kahng, Se-Jong
Publisher(s):
American Physical Society (APS); AMERICAN PHYSICAL SOC
Tags:
Materials Science; Physics and Astronomy; SCANNING TUNNELING SPECTROSCOPY; INTRAMOLECULAR JUNCTIONS
article description
The local electronic structure of semiconducting single-wall carbon nanotubes was studied with scanning tunneling microscopy. We performed scanning tunneling spectroscopy measurement at selected locations on the center axis of carbon nanotubes, acquiring a map of the electronic density of states. Spatial oscillation was observed in the electronic density of states with the period of atomic lattice. Defect induced interface states were found at the junctions of the two semiconducting nanotubes, which are well-understood in analogy with the interface states of bulk semiconductor heterostructures. The electronic leak of the van Hove singularity peaks was observed across the junction, due to inefficient charge screening in a one-dimensional structure. © 2005 The American Physical Society.