Some electrical characteristics of Cu‐ and in‐doped CuInTe
physica status solidi (a), ISSN: 1521-396X, Vol: 71, Issue: 2, Page: 523-530
1982
- 37Citations
Metric Options: CountsSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Citations37
- Citation Indexes37
- 37
- CrossRef32
Article Description
A detailed study is made on the effects of annealing CuInTe single crystals, both in vacuum and in the presence of elemental Cu and In. The variation of hole concentration with temperature is established and the acceptor state ionization energy is found to lie between 10 and 14 meV. This energy state is associated with the In vacancy. Mobility data are obtained and explained by taking into account various carrier scattering mechanisms including, ionized impurity, acoustic mode phonon, and space charge effects. The valence band deformation potential is found to be 5.35 eV. Copyright © 1982 WILEY‐VCH Verlag GmbH & Co. KGaA
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0020142053&origin=inward; http://dx.doi.org/10.1002/pssa.2210710227; https://onlinelibrary.wiley.com/doi/10.1002/pssa.2210710227; https://onlinelibrary.wiley.com/doi/full/10.1002/pssa.2210710227; https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpssa.2210710227; https://dx.doi.org/10.1002/pssa.2210710227; https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.2210710227
Wiley
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know