Attempts to Probe the Semi‐Insulating GaAs–Plasma Oxide Interface by Small‐Signal Charge DLTS
physica status solidi (a), ISSN: 1521-396X, Vol: 119, Issue: 2, Page: 701-710
1990
- 2Citations
Metric Options: Counts1 Year3 YearSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Citations2
- Citation Indexes2
- CrossRef2
Article Description
MOS devices on semi‐insulating (SI) GaAs (100) substrates with both, low and high Cr content are prepared by exposing the substrates to a rf oxygen discharge with subsequent evaporation of Al gate electrodes. Charge DLTS response of the MOS diodes to excitation by bias voltage steps of the order of kT/q is correlated with quasistatic C–U measurements. Trap‐limited charge DLTS spectra are observable in the case of the low Cr content, while dielectric relaxation being dominant for high Cr content in the substrate. The low‐Cr case resembles strongly the behaviour of MOS diodes on doped n‐type GaAs substrates. The dominant trapping level, thermally activated by ΔE = 0.7 eV, is assigned to an interface trap at midgap. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0025438471&origin=inward; http://dx.doi.org/10.1002/pssa.2211190235; https://onlinelibrary.wiley.com/doi/10.1002/pssa.2211190235; https://onlinelibrary.wiley.com/doi/full/10.1002/pssa.2211190235; https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpssa.2211190235; https://dx.doi.org/10.1002/pssa.2211190235
Wiley
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know