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Attempts to Probe the Semi‐Insulating GaAs–Plasma Oxide Interface by Small‐Signal Charge DLTS

physica status solidi (a), ISSN: 1521-396X, Vol: 119, Issue: 2, Page: 701-710
1990
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  • Citations
    2
    • Citation Indexes
      2

Article Description

MOS devices on semi‐insulating (SI) GaAs (100) substrates with both, low and high Cr content are prepared by exposing the substrates to a rf oxygen discharge with subsequent evaporation of Al gate electrodes. Charge DLTS response of the MOS diodes to excitation by bias voltage steps of the order of kT/q is correlated with quasistatic C–U measurements. Trap‐limited charge DLTS spectra are observable in the case of the low Cr content, while dielectric relaxation being dominant for high Cr content in the substrate. The low‐Cr case resembles strongly the behaviour of MOS diodes on doped n‐type GaAs substrates. The dominant trapping level, thermally activated by ΔE = 0.7 eV, is assigned to an interface trap at midgap. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA

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