Real-time monitoring of SiGe heteroepitaxial growth using laser light scattering and spectroscopic ellipsometry
Physica Status Solidi (A) Applied Research, ISSN: 0031-8965, Vol: 152, Issue: 1, Page: 95-102
1995
- 5Citations
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Citations5
- Citation Indexes5
- CrossRef4
Article Description
Laser light scattering and real-time spectroscopic ellipsometry have been used as in situ monitors for heteroepitaxial growth of SiGe and Si layers. The techniques have been used to optimize conditions for growth of smooth, high quality epilayers and the potential indicated for real-time control of morphology, composition, and thickness.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0029407049&origin=inward; http://dx.doi.org/10.1002/pssa.2211520110; https://onlinelibrary.wiley.com/doi/10.1002/pssa.2211520110; https://onlinelibrary.wiley.com/doi/full/10.1002/pssa.2211520110; https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpssa.2211520110; https://dx.doi.org/10.1002/pssa.2211520110
Wiley
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