Open issues for lasing at 1.3 μm in MOCVD-grown quantum dots
Physica Status Solidi (B) Basic Research, ISSN: 0370-1972, Vol: 238, Issue: 2, Page: 349-352
2003
- 10Captures
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Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Captures10
- Readers10
- 10
Conference Paper Description
A study of the carrier dynamics in MOCVD-grown InGaAs/GaAs quantum dots emitting at 1.3 μm at room temperature has been done. The PL rise time measured as a function of the temperature shows that carrier relaxation into the QD ground state occurs within a few picoseconds due to a very efficient carrier-phonon scattering process. In spite of this very efficient carrier capture in our dots and a small temperature dependence of the quantum efficiency, which are favorable for laser applications, we show that our QDs have a very strong permanent dipole moment which prevents the emission from the ground state and the lasing at 1.3 μm.
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