Influence of oxide thinning by selective etching process on solution processed indium zinc oxide thin film transistor
Digest of Technical Papers - SID International Symposium, ISSN: 2168-0159, Vol: 47, Issue: 1, Page: 1165-1167
2016
- 2Captures
Metric Options: CountsSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Captures2
- Readers2
Conference Paper Description
Conductive indium zinc oxide (IZO) film was fabricated using solution process. After source/drain deposition on the IZO film, we immersed the IZO thin film transistor (TFT) into acetic acid solution to selectively etch the area between source and drain. By this selective etching, the IZO TFT showed proper transfer characteristics.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85019111083&origin=inward; http://dx.doi.org/10.1002/sdtp.10859; https://onlinelibrary.wiley.com/doi/10.1002/sdtp.10859; https://onlinelibrary.wiley.com/doi/full/10.1002/sdtp.10859; https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fsdtp.10859; http://doi.wiley.com/10.1002/sdtp.10859; https://onlinelibrary.wiley.com/doi/abs/10.1002/sdtp.10859
Wiley
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know