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Reliability study of InP-based HBTs operating at high current density

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices, Page: 583-610
2013
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Book Chapter Description

The high-speed and low-power operation of InP-based heterojunction bipolar transistors (HBTs) makes them very attractive for use in opticalcommunication ICs operating at 40 Gbit/s and more. An important requirement for InP HBTs is long-term stability in their electrical characteristics under high current-density operation. This chapter describes the degradation behavior for devices operating at current densities of up to 10 mA/μm under elevated ambient temperatures. The results of electrical measurements and microscopic analyses indicate that surface passivation in the external base, a refractory electrode on the emitter, and high crystal quality at the emitter-base junction are the keys to enhancing device reliability.

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