II-VI Wide-Bandgap Semiconductor Device Technology: Deposition, Doping, and Etchig
Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors: Materials and Technology: Volume 1, Page: 465-490
2023
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Book Chapter Description
The main aspects of deposition, doping, and etching of II-VI compounds are considered in this chapter. The description of the main regularities of precipitation of II-VI compounds by various methods is given. The basic principles of doping, the approaches used for this, and the limitations that exist when doping II-VI compounds are considered. It is shown that ion implantation can be one of the effective methods for controlling the electrophysical parameters of II-VI semiconductors. An analysis of the processes occurring during chemical etching of II-VI compounds is given. The compositions of the solutions used for etching and the relationship between the chemical etching and the state of the surface are considered. It is shown that etching has a significant effect on the stoichiometry of the surface layer, resulting in the formation of regions enriched in chalcogen or metal. The features of dry etching of II-VI compounds are also described.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85207186276&origin=inward; http://dx.doi.org/10.1007/978-3-031-19531-0_16; https://link.springer.com/10.1007/978-3-031-19531-0_16; https://dx.doi.org/10.1007/978-3-031-19531-0_16; https://link.springer.com/chapter/10.1007/978-3-031-19531-0_16
Springer Science and Business Media LLC
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