Damage formation, amorphization and crystallization in semiconductors at elevated temperatures
Springer Series in Surface Sciences, ISSN: 0931-5195, Vol: 61, Page: 243-285
2016
- 3Citations
- 7Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Book Chapter Description
This chapter focusses on damage build up, amorphization and crystallization processes in a range of semiconductors under irradiation conditions close to the critical temperature for amorphization where small changes in ion fluence, ion flux, ion mass and irradiation temperature have a strong effect on the damage level and nature of the residual disorder. Layer-by-layer amorphization (IBIIA) and ion-beam-induced epitaxial crystallization (IBIEC) phenomena are also highlighted as well as anomalous processes such as ion-induced swelling, porosity and surface erosion.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84978701139&origin=inward; http://dx.doi.org/10.1007/978-3-319-33561-2_6; http://link.springer.com/10.1007/978-3-319-33561-2_6; http://link.springer.com/content/pdf/10.1007/978-3-319-33561-2_6; https://dx.doi.org/10.1007/978-3-319-33561-2_6; https://link.springer.com/chapter/10.1007/978-3-319-33561-2_6
Springer Science and Business Media LLC
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