Heteroepitaxy on porous silicon
Handbook of Porous Silicon: Second Edition, Vol: 2-2, Page: 867-874
2018
- 2Captures
Metric Options: CountsSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Captures2
- Readers2
Book Chapter Description
The literature on epitaxial growth of different materials on porous silicon substrate has been surveyed. This field was stimulated by the theoretical prediction in 1986 of stress field and hence defect reduction in lattice-mismatched film grown on a mesoporous substrate. Data now exists not only on Ge, SiC, and diamond films but also on a range of both III-Vand II-VI semiconductors, as well as other crystalline materials. Recently there has been most interest in GaN growth on porous silicon for optoelectronic applications.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85053947455&origin=inward; http://dx.doi.org/10.1007/978-3-319-71381-6_59; http://link.springer.com/10.1007/978-3-319-71381-6_59; https://dx.doi.org/10.1007/978-3-319-71381-6_59; https://link.springer.com/referenceworkentry/10.1007/978-3-319-71381-6_59
Springer Science and Business Media LLC
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know