Epitaxy for III-N-based electronic devices
Springer Series in Materials Science, ISSN: 2196-2812, Vol: 96, Page: 91-138
2008
- 1Citations
- 17Captures
Metric Options: CountsSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Book Chapter Description
For epitaxial growth, both the aluminum and indium-based binary and ternary compounds are described with emphasis on AlGaN/GaN and In--Ga--N-based heterostructure systems in the third chapter. Epitaxial growth techniques such as molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) is analyzed systematically. Nitride-specific material characterization, doping, and material quality issues are analyzed. Substrate properties are reviewed systematically with respect to electronic requirements.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85072928247&origin=inward; http://dx.doi.org/10.1007/978-3-540-71892-5_3; http://link.springer.com/10.1007/978-3-540-71892-5_3; http://www.springerlink.com/index/10.1007/978-3-540-71892-5_3; http://www.springerlink.com/index/pdf/10.1007/978-3-540-71892-5_3; https://dx.doi.org/10.1007/978-3-540-71892-5_3; https://link.springer.com/chapter/10.1007/978-3-540-71892-5_3
Springer Science and Business Media LLC
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know