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Reflectance vs. Electroreflectance measurements on arsenic-doped silicon crystal

Il Nuovo Cimento D, ISSN: 0392-6737, Vol: 10, Issue: 8, Page: 979-988
1988
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  • Citations
    3
    • Citation Indexes
      3

Article Description

Reflectance and electroreflectance measurements from 2.5 to 5.5 eV, performed on arsenic heavily doped silicon samples, are reported and discussed. Silicon crystals implanted with arsenic up to a fluence of 10 cm were laser irradiated and a free-carrier concentration of the order of 10cm was reached. The reordering of the system is studied in detail at different initial conditions. A comparison between reflectance and electro-reflectance appears to be quite useful to determine the behaviour of the heavily doped semiconductor. © 1988 Società Italiana di Fisica.

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