Reflectance vs. Electroreflectance measurements on arsenic-doped silicon crystal
Il Nuovo Cimento D, ISSN: 0392-6737, Vol: 10, Issue: 8, Page: 979-988
1988
- 3Citations
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Citations3
- Citation Indexes3
- CrossRef2
Article Description
Reflectance and electroreflectance measurements from 2.5 to 5.5 eV, performed on arsenic heavily doped silicon samples, are reported and discussed. Silicon crystals implanted with arsenic up to a fluence of 10 cm were laser irradiated and a free-carrier concentration of the order of 10cm was reached. The reordering of the system is studied in detail at different initial conditions. A comparison between reflectance and electro-reflectance appears to be quite useful to determine the behaviour of the heavily doped semiconductor. © 1988 Società Italiana di Fisica.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=51249174316&origin=inward; http://dx.doi.org/10.1007/bf02450198; http://link.springer.com/10.1007/BF02450198; http://link.springer.com/content/pdf/10.1007/BF02450198; http://link.springer.com/content/pdf/10.1007/BF02450198.pdf; http://link.springer.com/article/10.1007/BF02450198/fulltext.html; http://www.springerlink.com/index/pdf/10.1007/BF02450198; http://www.springerlink.com/index/10.1007/BF02450198; https://dx.doi.org/10.1007/bf02450198; https://link.springer.com/article/10.1007/BF02450198
Springer Science and Business Media LLC
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