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Surface structure of β-FeSi(101) epitaxially grown on Si(111)

Applied Physics A Solids and Surfaces, ISSN: 0721-7250, Vol: 57, Issue: 6, Page: 477-482
1993
  • 13
    Citations
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  • 4
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    13
    • Citation Indexes
      13
  • Captures
    4

Article Description

The surface morphology and structure of β-FeSi(101) films epitaxially grown on Si(111) has been studied by means of Scanning Tunneling Microscopy (STM). The films are formed by large crystallites which are single domain. Each crystallite has only one of the three possible azimuthal orientations with respect to the substrate. A large density of planar defects, however, is detected on top of each crystallite. They are assigned to intrinsic stacking faults and their existence seems hard to avoid. This high density of intrinsic defects casts serious doubts on the use of β-FeSi as an optoelectronic material. © 1993 Springer-Verlag.

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