Formation of icosahedral phase by solid-state diffusion of alternating thin layers
Journal of Materials Science, ISSN: 0022-2461, Vol: 27, Issue: 20, Page: 5553-5557
1992
- 9Citations
- 2Captures
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Article Description
Thin alternating layers of Al-Cr were produced by sputtering. Heat treatment transforms them to the icosahedral phase. The effect of the layer thickness on their ability to transform to single-phase icosahedral film was examined and it was found that very thin alternating layers react completely to form a single icosahedral phase, while heat treatment of thicker layers always produced the icosahedral phase with residual aluminium. An attempt has been made to explain the results based on the crystallographic structure of the icosahedral phase. © 1992 Chapman & Hall.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0007328933&origin=inward; http://dx.doi.org/10.1007/bf00541621; http://link.springer.com/10.1007/BF00541621; http://link.springer.com/content/pdf/10.1007/BF00541621; http://link.springer.com/content/pdf/10.1007/BF00541621.pdf; http://link.springer.com/article/10.1007/BF00541621/fulltext.html; https://dx.doi.org/10.1007/bf00541621; https://link.springer.com/article/10.1007/BF00541621; http://www.springerlink.com/index/10.1007/BF00541621; http://www.springerlink.com/index/pdf/10.1007/BF00541621
Springer Science and Business Media LLC
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