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Microstructural changes of Al/amorphous SiC layered films subjected to heating

Journal of Materials Science, ISSN: 0022-2461, Vol: 24, Issue: 9, Page: 3096-3100
1989
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Metrics Details

  • Citations
    11
    • Citation Indexes
      11
  • Captures
    2

Article Description

Layered specimens composed of aluminium and a-SiC films were prepared at room temperature by r.f. magnetron sputtering. a-SiC/Al/a-SiC triple-layered films were heated in the trans mission electron microscope (TEM), and the in-situ microstructural changes were observed continuously. In order to estimate the interfacial reaction process kinematically, electrical resistance measurements were conducted on Al/a-SiC double-layered films heated isothermally at 573, 598 and 623 K. The in-situ TEM observations showed that no pronounced interfacial reactions occurred up to about 600 K, that silicon precipitates were formed and grew around 673 K, and that AlC compounds were produced during heating at temperatures above about 753 K. The electrical resistance of Al/a-SiC double-layered film heated isothermally increased gradually with heating time, and this increase was closely related to the volume fraction of silicon precipitates in the aluminium film. From the kinematical analyses of the results of electrical resistance measurements, an activation energy of the interfacial reaction process of aluminium with a-SiC films in the temperature range 573 to 623 K was found to be about 2.6 eV, being close to the bond energy of Si-C. © 1989 Chapman and Hall Ltd.

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