Monte Carlo simulation of ion implantation into solids as a tool for the characterization of surface analytical reference materials

The physical and chemical prerequisites of ion implantation and their translation into a Monte Carlo calculation simulating the implantation process of high energy ions (300 keV) are described; calculations are extended to high dose implantation (up to 1×10 ions cm) taking into consideration various effects such as matrix change during implantation, cascade mixing, sputter erosion and relaxation of the target material. To check the suitability of such calculations for a characterization of implanted samples, the results of the calculations are compared with those obtained experimentally from implanted samples. As an example, P is implanted into polycrystalline Al at various doses (1⋯10×10p cm), and depth profiles are taken by AES/Ar-sputtering. The calculated and measured results agree better than 10% for both the depth and the concentration scale. © 1987 Springer-Verlag.