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Effect of neutral scatterers on electron mobility in silicon (100) inversion layers

Zeitschrift für Physik B Condensed Matter, ISSN: 0722-3277, Vol: 55, Issue: 1, Page: 33-39
1984
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The electron mobility in n-type inversion layers at (100) silicon surface is studied at low temperature. Using the lowest subband calculated numerically, and taking into account the neutral impurity distribution in the vicinity of the Si-SiO interface, the process of carrier scattering is investigated by the Green's function formalism. Experimental data for electron mobility are in good agreement with the results from Dyson's equation in Born approximation in the case of shallow and steep profiles of impurities. © 1984 Springer-Verlag.

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