Characterization of a diffusion-bonded Al-Mg alloy/SiC interface by high resolution and analytical electron microscopy
Metallurgical and Materials Transactions A, ISSN: 1073-5623, Vol: 25, Issue: 3, Page: 617-627
1994
- 18Citations
- 6Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Article Description
The interfacial structure of a diffusion-bonded Al-4.55 at. pct Mg/SiC interface was examined by conventional and high-resolution transmission electron microscopy. Formation of MgSi, MgO, and AlMgO was observed. The monoclinic MgSi phase formed at the Al/SiC interface, while the oxides MgO and AlMgO formed at the monoclinic MgSi/Al interface. It is shown that the formation of these phases can be predicted using simple thermodynamic criteria such as the relative bond strengths between Al, Si, C, O, and Mg. In addition, precipitation of some equilibrium AlMg precipitate was also observed at the interface. The interfacial structure observed in the Al-Mg/SiC system is contrasted with that observed in the pure Al/SiC system. © 1994 The Minerals, Metals and Materials Society, and ASM International.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0028386967&origin=inward; http://dx.doi.org/10.1007/bf02651603; http://link.springer.com/10.1007/BF02651603; http://www.springerlink.com/index/pdf/10.1007/BF02651603; https://link.springer.com/10.1007/BF02651603; http://www.springerlink.com/index/10.1007/BF02651603; https://dx.doi.org/10.1007/bf02651603; https://link.springer.com/article/10.1007/BF02651603
Springer Nature
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